IRFF9133
vs
JAN2N6849
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
|
| DS Breakdown Voltage-Min |
80 V
|
|
| Drain Current-Max (ID) |
6.5 A
|
|
| Drain-source On Resistance-Max |
0.4 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-205AF
|
|
| JESD-30 Code |
O-MBCY-W3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
P-CHANNEL
|
|
| Pulsed Drain Current-Max (IDM) |
26 A
|
|
| Qualification Status |
COMMERCIAL
|
Qualified
|
| Surface Mount |
NO
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
6
|
2
|
| ECCN Code |
|
EAR99
|
|
|
|
Compare IRFF9133 with alternatives
Compare JAN2N6849 with alternatives