Part Details for JAN2N6849 by Defense Logistics Agency
Overview of JAN2N6849 by Defense Logistics Agency
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Part Details for JAN2N6849
JAN2N6849 CAD Models
JAN2N6849 Part Data Attributes
Alternate Parts for JAN2N6849
This table gives cross-reference parts and alternative options found for JAN2N6849. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6849, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6849-JQR-BR1 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6849 vs 2N6849-JQR-BR1 |
| 2N6849 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JAN2N6849 vs 2N6849 |
| 2N6849R1 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6849 vs 2N6849R1 |
| IRFF9130-QR-B | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6849 vs IRFF9130-QR-B |
| IRFF9130 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JAN2N6849 vs IRFF9130 |
| IRFF9132 | 5.5A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Rochester Electronics LLC | JAN2N6849 vs IRFF9132 |
| 2N6849-JQRR1 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6849 vs 2N6849-JQRR1 |
| 2N6849TXV | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | JAN2N6849 vs 2N6849TXV |
| 2N6849TXV | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Fairchild Semiconductor Corporation | JAN2N6849 vs 2N6849TXV |
| JANTXV2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | JAN2N6849 vs JANTXV2N6849 |