IRFH5020TRPBF vs IRFH5020TRPBF feature comparison

IRFH5020TRPBF International Rectifier

Buy Now Datasheet

IRFH5020TRPBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP INFINEON TECHNOLOGIES AG
Part Package Code QFN
Package Description 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Pin Count 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Avalanche Energy Rating (Eas) 320 mJ 320 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 5.1 A 5.1 A
Drain-source On Resistance-Max 0.055 Ω 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5 R-PDSO-N5
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 5 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 8.3 W 8.3 W
Pulsed Drain Current-Max (IDM) 63 A 63 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C

Compare IRFH5020TRPBF with alternatives

Compare IRFH5020TRPBF with alternatives