IRFH5020TRPBF
vs
IRFH5020TRPBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
QFN
|
|
Package Description |
6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
|
|
Pin Count |
8
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas) |
320 mJ
|
320 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
5.1 A
|
5.1 A
|
Drain-source On Resistance-Max |
0.055 Ω
|
0.055 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-N5
|
R-PDSO-N5
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
8.3 W
|
8.3 W
|
Pulsed Drain Current-Max (IDM) |
63 A
|
63 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Factory Lead Time |
|
12 Weeks
|
Samacsys Manufacturer |
|
Infineon
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare IRFH5020TRPBF with alternatives
Compare IRFH5020TRPBF with alternatives