IRFM250
vs
IRFN250-JQR-BR4
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
TT ELECTRONICS PLC
|
| Package Description |
FLANGE MOUNT, S-MSFM-P3
|
UNCASED CHIP, R-XUUC-N3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
ISOLATED
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
27.4 A
|
22 A
|
| Drain-source On Resistance-Max |
0.105 Ω
|
0.105 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-254AA
|
|
| JESD-30 Code |
S-MSFM-P3
|
R-XUUC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
UNSPECIFIED
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
UNCASED CHIP
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
110 A
|
88 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
PIN/PEG
|
NO LEAD
|
| Terminal Position |
SINGLE
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
1
|
| Avalanche Energy Rating (Eas) |
|
500 mJ
|
| JESD-609 Code |
|
e4
|
| Terminal Finish |
|
GOLD
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFM250 with alternatives
Compare IRFN250-JQR-BR4 with alternatives