IRFR2407TRRPBF vs SP001556854 feature comparison

IRFR2407TRRPBF Infineon Technologies AG

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SP001556854 Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 77 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 170 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare IRFR2407TRRPBF with alternatives

Compare SP001556854 with alternatives