Part Details for SP001556854 by Infineon Technologies AG
Overview of SP001556854 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SP001556854
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001556854
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EBV Elektronik | Trans MOSFET N-CH 75V 42A 3-Pin(2+Tab) DPAK T/R (Alt: SP001556854) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 11 Weeks, 0 Days | EBV - 0 |
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Part Details for SP001556854
SP001556854 CAD Models
SP001556854 Part Data Attributes:
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SP001556854
Infineon Technologies AG
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Datasheet
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Compare Parts:
SP001556854
Infineon Technologies AG
Power Field-Effect Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 77 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 170 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SP001556854
This table gives cross-reference parts and alternative options found for SP001556854. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SP001556854, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRFR2407 | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs AUIRFR2407 |
| IRFR2407PBF | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | SP001556854 vs IRFR2407PBF |
| IRFR2407PBF | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs IRFR2407PBF |
| IRFR2407TRRPBF | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs IRFR2407TRRPBF |
| AUIRFR2407TRL | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs AUIRFR2407TRL |
| IRFR2407TRPBF | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs IRFR2407TRPBF |
| IRFR2407TRL | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs IRFR2407TRL |
| AUIRFR2407TRL | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | SP001556854 vs AUIRFR2407TRL |
| IRFR2407TR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs IRFR2407TR |
| AUIRFR2407TRR | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | SP001556854 vs AUIRFR2407TRR |