IRFR9220 vs SI7119DN-T1-GE3 feature comparison

IRFR9220 Harris Semiconductor

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SI7119DN-T1-GE3 Vishay Intertechnologies

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 0.6 A 1.2 A
Drain-source On Resistance-Max 1.5 Ω 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 S-XDSO-C5
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 42 W
Power Dissipation-Max (Abs) 42 W 52 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Matte Tin (Sn) - annealed
Terminal Form GULL WING C BEND
Terminal Position SINGLE DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 50 ns
Base Number Matches 2 1
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 1.25 mJ
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 5 A
Time@Peak Reflow Temperature-Max (s) 30

Compare IRFR9220 with alternatives

Compare SI7119DN-T1-GE3 with alternatives