IRFR92209A vs SI7119DN-T1-GE3 feature comparison

IRFR92209A Harris Semiconductor

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SI7119DN-T1-GE3 Vishay Intertechnologies

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2 HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 0.6 A 1.2 A
Drain-source On Resistance-Max 1.5 Ω 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 S-XDSO-C5
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 42 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING C BEND
Terminal Position SINGLE DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 50 ns
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 1.25 mJ
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 5 A
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30

Compare IRFR92209A with alternatives

Compare SI7119DN-T1-GE3 with alternatives