IRFU5305 vs SPU30P06P feature comparison

IRFU5305 Infineon Technologies AG

Buy Now Datasheet

SPU30P06P Infineon Technologies AG

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description IPAK-3 IN-LINE, R-PSIP-T3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature HIGH RELIABILITY AVALANCHE RATED
Avalanche Energy Rating (Eas) 280 mJ 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 31 A 30 A
Drain-source On Resistance-Max 0.065 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA TO-251
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e0 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A 120 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Part Package Code TO-251
Pin Count 3
Power Dissipation-Max (Abs) 125 W

Compare IRFU5305 with alternatives

Compare SPU30P06P with alternatives