Part Details for SPU30P06P by Infineon Technologies AG
Overview of SPU30P06P by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPU30P06P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPU30P06P
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Avnet Americas | Trans MOSFET N-CH -60V -30A 3-Pin(3+Tab) TO-251 - Rail/Tube (Alt: SPU30P06P) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 568 Partner Stock |
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RFQ | |
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Rochester Electronics | SPU30P06 - SIPMOS, 30A, 60V, 0.075ohm, P-Channel, Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 30 |
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$0.4711 / $0.5542 | Buy Now |
Part Details for SPU30P06P
SPU30P06P CAD Models
SPU30P06P Part Data Attributes
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SPU30P06P
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPU30P06P
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-251 | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for SPU30P06P
This table gives cross-reference parts and alternative options found for SPU30P06P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPU30P06P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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UTT25P06L-TN3-T | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, | Unisonic Technologies Co Ltd | SPU30P06P vs UTT25P06L-TN3-T |
SPU30P06P | 30A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3 | Rochester Electronics LLC | SPU30P06P vs SPU30P06P |
UTT25P06L-TN3-R | Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | SPU30P06P vs UTT25P06L-TN3-R |
MTB30P06VT4 | 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | onsemi | SPU30P06P vs MTB30P06VT4 |
SPD30P06P-E4-E6327 | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | SPU30P06P vs SPD30P06P-E4-E6327 |
MTB30P06VT4G | Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL | onsemi | SPU30P06P vs MTB30P06VT4G |
MTB30P06V | 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | onsemi | SPU30P06P vs MTB30P06V |
SPD30P06PG | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPU30P06P vs SPD30P06PG |
SPD30P06P | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | SPU30P06P vs SPD30P06P |
AUIRFU5305 | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 | International Rectifier | SPU30P06P vs AUIRFU5305 |