IRFZ24NPBF
vs
BUZ71
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MICROSEMI CORP
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
ESD PROTECTED
|
|
Avalanche Energy Rating (Eas) |
30 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
55 V
|
50 V
|
Drain Current-Max (ID) |
17 A
|
56 A
|
Drain-source On Resistance-Max |
0.07 Ω
|
0.1 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
68 A
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
20
|
JESD-609 Code |
|
e0
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare IRFZ24NPBF with alternatives
Compare BUZ71 with alternatives