IRG4PC50UPBF vs GT8Q101 feature comparison

IRG4PC50UPBF Infineon Technologies AG

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GT8Q101 Toshiba America Electronic Components

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Toshiba
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 55 A 8 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 130 ns 500 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 200 W 150 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 390 ns
Turn-off Time-Nom (toff) 258 ns
Turn-on Time-Nom (ton) 52 ns
VCEsat-Max 2 V 4 V
Base Number Matches 1 2
Package Description 2-16C1C, 3 PIN
Pin Count 3
HTS Code 8541.29.00.95
Additional Feature HIGH SPEED
Power Dissipation Ambient-Max 100 W
Rise Time-Max (tr) 600 ns

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