IRHN9150PBF vs IRHN93150PBF feature comparison

IRHN9150PBF Infineon Technologies AG

Buy Now Datasheet

IRHN93150PBF International Rectifier

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERNATIONAL RECTIFIER CORP
Package Description CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature RADIATION HARDENED RADIATION HARDENED; AVALANCHE RATED
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 22 A 22 A
Drain-source On Resistance-Max 0.085 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3 R-CBCC-N3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 88 A 88 A
Reference Standard RH - 100K Rad(Si)
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 380 ns 290 ns
Turn-on Time-Max (ton) 210 ns 190 ns
Base Number Matches 2 2
Pbfree Code Yes
Pin Count 3
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 150 W
Qualification Status Not Qualified

Compare IRHN9150PBF with alternatives

Compare IRHN93150PBF with alternatives