IRHN9150PBF vs JANSF2N7422U feature comparison

IRHN9150PBF Infineon Technologies AG

Buy Now Datasheet

JANSF2N7422U Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature RADIATION HARDENED HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 22 A 22 A
Drain-source On Resistance-Max 0.085 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3 R-CBCC-N3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 150 W 4 W
Pulsed Drain Current-Max (IDM) 88 A 88 A
Reference Standard RH - 100K Rad(Si) MIL-19500/662
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 380 ns
Turn-on Time-Max (ton) 210 ns
Base Number Matches 2 2
JESD-609 Code e0
Qualification Status Qualified
Terminal Finish Tin/Lead (Sn/Pb)

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