IRHN93150 vs IRHN93150PBF feature comparison

IRHN93150 Infineon Technologies AG

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IRHN93150PBF International Rectifier

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Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERNATIONAL RECTIFIER CORP
Package Description CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature RADIATION HARDENED; AVALANCHE RATED RADIATION HARDENED; AVALANCHE RATED
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 22 A 22 A
Drain-source On Resistance-Max 0.085 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3 R-CBCC-N3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 88 A 88 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pbfree Code Yes
Pin Count 3
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 290 ns
Turn-on Time-Max (ton) 190 ns

Compare IRHN93150 with alternatives

Compare IRHN93150PBF with alternatives