IRHNA8064
vs
JANSH2N7431U
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
|
| Package Description |
CHIP CARRIER, R-CBCC-N3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.29.00.95
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Avalanche Energy Rating (Eas) |
500 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
75 A
|
|
| Drain-source On Resistance-Max |
0.018 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
R-CBCC-N3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
CHIP CARRIER
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation Ambient-Max |
300 W
|
|
| Pulsed Drain Current-Max (IDM) |
300 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
NO LEAD
|
|
| Terminal Position |
BOTTOM
|
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
|
|
|
|
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