Part Details for IRHNA8064PBF by International Rectifier
Overview of IRHNA8064PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRHNA8064PBF
IRHNA8064PBF CAD Models
IRHNA8064PBF Part Data Attributes
|
IRHNA8064PBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRHNA8064PBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | CHIP CARRIER, R-CBCC-N3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CBCC-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 300 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRHNA8064PBF
This table gives cross-reference parts and alternative options found for IRHNA8064PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHNA8064PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
JANTXVH2N7431U | Power Field-Effect Transistor, 75A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 3 PIN | International Rectifier | IRHNA8064PBF vs JANTXVH2N7431U |
IRHNA7064PBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN | International Rectifier | IRHNA8064PBF vs IRHNA7064PBF |
JANSR2N7431U | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN | Infineon Technologies AG | IRHNA8064PBF vs JANSR2N7431U |
JANSR2N7431U | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN | International Rectifier | IRHNA8064PBF vs JANSR2N7431U |
IRHNA7064 | Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN | Infineon Technologies AG | IRHNA8064PBF vs IRHNA7064 |