IRLL014NTR vs IRLL014NTRPBF feature comparison

IRLL014NTR Infineon Technologies AG

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IRLL014NTRPBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature HIGH RELIABILITY AVALANCHE RATED
Avalanche Energy Rating (Eas) 32 mJ 32 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 2 A 2 A
Drain-source On Resistance-Max 0.14 Ω 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA TO-261AA
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A 16 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Package Description SOT-223, 4 PIN
Feedback Cap-Max (Crss) 30 pF
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 2.1 W
Time@Peak Reflow Temperature-Max (s) 30

Compare IRLL014NTR with alternatives

Compare IRLL014NTRPBF with alternatives