IRLL2705TRPBF vs IRLL2705PBF feature comparison

IRLL2705TRPBF Infineon Technologies AG

Buy Now Datasheet

IRLL2705PBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 110 mJ 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 92 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 30 A 30 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 1

Compare IRLL2705TRPBF with alternatives

Compare IRLL2705PBF with alternatives