Datasheets
IRLL2705TRPBF by:

Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN

Part Details for IRLL2705TRPBF by Infineon Technologies AG

Overview of IRLL2705TRPBF by Infineon Technologies AG

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Price & Stock for IRLL2705TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 19K8372
Newark N Channel Mosfet, 55V, 3.8A Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:3.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLL2705TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 39496
  • 1 $0.3880
  • 10 $0.3880
  • 25 $0.3880
  • 50 $0.3880
  • 100 $0.3880
  • 250 $0.3880
  • 500 $0.3560
  • 1,000 $0.3560
$0.3560 / $0.3880 Buy Now
DISTI # IRLL2705PBFCT-ND
DigiKey MOSFET N-CH 55V 3.8A SOT223 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5119
In Stock
  • 1 $0.8700
  • 10 $0.7090
  • 100 $0.5517
  • 500 $0.4676
  • 1,000 $0.3809
  • 2,500 $0.3586
  • 5,000 $0.3415
  • 12,500 $0.3257
  • 25,000 $0.3251
$0.3251 / $0.8700 Buy Now
DISTI # IRLL2705TRPBF
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
RFQ
DISTI # IRLL2705TRPBF
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3576
  • 5,000 $0.3467
  • 10,000 $0.3359
  • 15,000 $0.3251
  • 20,000 $0.3142
  • 25,000 $0.3034
  • 250,000 $0.2925
$0.2925 / $0.3576 Buy Now
DISTI # IRLL2705TRPBF
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3576
  • 5,000 $0.3467
  • 10,000 $0.3359
  • 15,000 $0.3251
  • 20,000 $0.3142
  • 25,000 $0.3034
  • 250,000 $0.2925
$0.2925 / $0.3576 Buy Now
DISTI # 19K8372
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free - Product that comes on tape, but is not reeled (Alt: 19K8372) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack 8991 Partner Stock
  • 1 $1.0500
  • 10 $0.8760
  • 25 $0.8160
  • 50 $0.7540
  • 100 $0.6940
$0.6940 / $1.0500 Buy Now
DISTI # 942-IRLL2705TRPBF
Mouser Electronics MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl RoHS: Compliant 13472
  • 1 $0.8700
  • 10 $0.7090
  • 100 $0.5520
  • 500 $0.4680
  • 1,000 $0.3810
  • 2,500 $0.3580
  • 5,000 $0.3410
  • 10,000 $0.3330
$0.3330 / $0.8700 Buy Now
DISTI # 70017817
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.04Ohm, ID 3.8A, SOT-223,PD 1W, VGS+/-16V,-55C | Infineon IRLL2705TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk 0
  • 20 $1.2100
  • 100 $1.1500
  • 200 $1.0900
  • 2,000 $1.0300
  • 5,000 $0.9700
$0.9700 / $1.2100 RFQ
Future Electronics Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.3400
  • 5,000 $0.3300
  • 7,500 $0.3300
  • 10,000 $0.3250
  • 12,500 $0.3150
$0.3150 / $0.3400 Buy Now
Future Electronics Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3400
  • 5,000 $0.3300
  • 7,500 $0.3300
  • 10,000 $0.3250
  • 12,500 $0.3150
$0.3150 / $0.3400 Buy Now
Quest Components 5.2 A, 55 V, 0.051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 664
  • 1 $1.1625
  • 87 $0.5813
  • 345 $0.4650
$0.4650 / $1.1625 Buy Now
Rochester Electronics IRLL2705 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 500
  • 1 $0.4635
  • 25 $0.4542
  • 100 $0.4357
  • 500 $0.4172
  • 1,000 $0.3940
$0.3940 / $0.4635 Buy Now
DISTI # IRLL2705TRPBF
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
RFQ
DISTI # IRLL2705TRPBF
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3576
  • 5,000 $0.3467
  • 10,000 $0.3359
  • 15,000 $0.3251
  • 20,000 $0.3142
  • 25,000 $0.3034
  • 250,000 $0.2925
$0.2925 / $0.3576 Buy Now
DISTI # IRLL2705TRPBF
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3576
  • 5,000 $0.3467
  • 10,000 $0.3359
  • 15,000 $0.3251
  • 20,000 $0.3142
  • 25,000 $0.3034
  • 250,000 $0.2925
$0.2925 / $0.3576 Buy Now
DISTI # 19K8372
Avnet Americas Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free - Product that comes on tape, but is not reeled (Alt: 19K8372) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack 8991 Partner Stock
  • 1 $1.0500
  • 10 $0.8760
  • 25 $0.8160
  • 50 $0.7540
  • 100 $0.6940
$0.6940 / $1.0500 Buy Now
DISTI # IRLL2705TRPBF
TME Transistor: N-MOSFET, unipolar, 55V, 3.8A, 2.1W, SOT223 Min Qty: 1 1895
  • 1 $0.7980
  • 10 $0.6990
  • 25 $0.6240
  • 100 $0.5240
  • 250 $0.4720
  • 500 $0.4370
  • 1,000 $0.4170
  • 2,500 $0.3740
$0.3740 / $0.7980 Buy Now
Ameya Holding Limited Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223 7500
RFQ
DISTI # SMC-IRLL2705TRPBF
Sensible Micro Corporation Trans Mosfet N-Ch Irll27 RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1129 Container: Tape & Reel 1800
  • 100 $0.1520
  • 500 $0.1520
  • 1,000 $0.1520
$0.1520 RFQ
DISTI # SMC-IRLL2705TRPBF
Sensible Micro Corporation Trans Mosfet N-Ch Irll27 RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Cut Tape 42
  • 100 $0.1520
  • 500 $0.1520
  • 1,000 $0.1520
$0.1520 RFQ
DISTI # SP001558266
EBV Elektronik Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free (Alt: SP001558266) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days EBV - 177500
Buy Now
Flip Electronics Stock, ship today 1625
  • 1 $0.0500
$0.0500 RFQ
LCSC 55V 3.8A 40m10V3.8A 1W 2V250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS 10110
  • 1 $0.4074
  • 10 $0.3358
  • 30 $0.3059
  • 100 $0.2686
  • 500 $0.1895
  • 1,000 $0.1791
$0.1791 / $0.4074 Buy Now
New Advantage Corporation Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET� Power Mosfet - SOT-223 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 152500
  • 2,500 $0.3179
  • 152,500 $0.2958
$0.2958 / $0.3179 Buy Now
Win Source Electronics MOSFET N-CH 55V 3.8A SOT223 385650
  • 170 $0.2970
  • 410 $0.2440
  • 640 $0.2360
  • 875 $0.2290
  • 1,135 $0.2210
  • 1,520 $0.1980
$0.1980 / $0.2970 Buy Now

Part Details for IRLL2705TRPBF

IRLL2705TRPBF CAD Models

IRLL2705TRPBF Part Data Attributes:

IRLL2705TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLL2705TRPBF Infineon Technologies AG Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 92 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLL2705TRPBF

This table gives cross-reference parts and alternative options found for IRLL2705TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL2705TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL2705TRPBF vs IRLL2705PBF
IRLL2705 Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier IRLL2705TRPBF vs IRLL2705
IRLL2705TR Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL2705TRPBF vs IRLL2705TR
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705TRPBF vs IRLL2705PBF
IRLL2705TRPBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL2705TRPBF vs IRLL2705TRPBF
Part Number Description Manufacturer Compare
IRLL2705TRPBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL2705TRPBF vs IRLL2705TRPBF
IRLL2705TR Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL2705TRPBF vs IRLL2705TR
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705TRPBF vs IRLL2705PBF
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL2705TRPBF vs IRLL2705PBF
IRLL2705 Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier IRLL2705TRPBF vs IRLL2705

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