IS61DDPB21M36C1-500B4LI
vs
IS61DDP2B21M36C-500B4
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
INTEGRATED SILICON SOLUTION INC
|
Package Description |
LBGA,
|
LBGA,
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
0.45 ns
|
0.45 ns
|
JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
Length |
15 mm
|
15 mm
|
Memory Density |
37748736 bit
|
37748736 bit
|
Memory IC Type |
DDR SRAM
|
DDR SRAM
|
Memory Width |
36
|
36
|
Moisture Sensitivity Level |
3
|
|
Number of Functions |
1
|
1
|
Number of Terminals |
165
|
165
|
Number of Words |
1048576 words
|
1048576 words
|
Number of Words Code |
1000000
|
1000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
1MX36
|
1MX36
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Voltage-Max (Vsup) |
1.89 V
|
1.89 V
|
Supply Voltage-Min (Vsup) |
1.71 V
|
1.71 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
13 mm
|
13 mm
|
Base Number Matches |
1
|
4
|
Additional Feature |
|
PIPELINED ARCHITECTURE
|
|
|
|
Compare IS61DDPB21M36C1-500B4LI with alternatives
Compare IS61DDP2B21M36C-500B4 with alternatives