IS61DDPB21M36C1-500B4LI
vs
IS61DDP2B21M36C-500B4L
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
INTEGRATED SILICON SOLUTION INC
|
| Package Description |
LBGA,
|
LBGA,
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
0.45 ns
|
0.45 ns
|
| JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
| Length |
15 mm
|
15 mm
|
| Memory Density |
37748736 bit
|
37748736 bit
|
| Memory IC Type |
DDR SRAM
|
DDR SRAM
|
| Memory Width |
36
|
36
|
| Moisture Sensitivity Level |
3
|
3
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
165
|
165
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
1MX36
|
1MX36
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
LBGA
|
LBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Seated Height-Max |
1.4 mm
|
1.4 mm
|
| Supply Voltage-Max (Vsup) |
1.89 V
|
1.89 V
|
| Supply Voltage-Min (Vsup) |
1.71 V
|
1.71 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
13 mm
|
13 mm
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| Additional Feature |
|
PIPELINED ARCHITECTURE
|
| JESD-609 Code |
|
e1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare IS61DDPB21M36C1-500B4LI with alternatives
Compare IS61DDP2B21M36C-500B4L with alternatives