IS61NLP51236B-200B3LI
vs
IS61NLP51236B-200B3L
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
INTEGRATED SILICON SOLUTION INC
|
| Package Description |
TBGA,
|
TBGA,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Factory Lead Time |
12 Weeks
|
|
| Access Time-Max |
3 ns
|
3 ns
|
| JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
| Length |
15 mm
|
15 mm
|
| Memory Density |
18874368 bit
|
18874368 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
36
|
36
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
165
|
165
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
512KX36
|
512KX36
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TBGA
|
TBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, THIN PROFILE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
3.465 V
|
3.465 V
|
| Supply Voltage-Min (Vsup) |
3.135 V
|
3.135 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Width |
13 mm
|
13 mm
|
| Base Number Matches |
2
|
4
|
|
|
|
Compare IS61NLP51236B-200B3LI with alternatives
Compare IS61NLP51236B-200B3L with alternatives