IXTH130N10T vs IXTP130N10T feature comparison

IXTH130N10T IXYS Corporation

Buy Now Datasheet

IXTP130N10T IXYS Corporation

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer IXYS CORP IXYS CORP
Part Package Code TO-247AD TO-220AB
Package Description PLASTIC, TO-247, 3 PIN PLASTIC, TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 130 A 130 A
Drain-source On Resistance-Max 0.0091 Ω 0.0091 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 360 W 360 W
Pulsed Drain Current-Max (IDM) 300 A 350 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare IXTH130N10T with alternatives

Compare IXTP130N10T with alternatives