JAN1N4948 vs 1F7_R2_10001 feature comparison

JAN1N4948 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

1F7_R2_10001 PanJit Semiconductor

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description E-LALF-W2
Reach Compliance Code unknown compliant
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code E-LALF-W2 O-PALF-W2
JESD-609 Code e0
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 1 A 1 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ELLIPTICAL ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Recovery Time-Max 5 µs 0.5 µs
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 5 1
ECCN Code EAR99
HTS Code 8541.10.00.80
Forward Voltage-Max (VF) 1.3 V
Non-rep Pk Forward Current-Max 30 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare JAN1N4948 with alternatives

Compare 1F7_R2_10001 with alternatives