JAN1N5809
vs
RGP30B
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VPT COMPONENTS
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Application |
ULTRA FAST RECOVERY POWER
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-XALF-W2
|
O-XALF-W2
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
0.03 µs
|
0.15 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
METALLURGICAL BONDED
|
| Forward Voltage-Max (VF) |
|
1.3 V
|
| JEDEC-95 Code |
|
DO-201AD
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
175 °C
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare JAN1N5809 with alternatives
Compare RGP30B with alternatives