JAN1N5822US
vs
1N5822USE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Base Number Matches |
5
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
HERMETIC SEALED, D5B, 2 PIN
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Application |
|
GENERAL PURPOSE
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Forward Voltage-Max (VF) |
|
0.4 V
|
| JESD-30 Code |
|
O-LELF-R2
|
| Non-rep Pk Forward Current-Max |
|
80 A
|
| Number of Elements |
|
1
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
125 °C
|
| Output Current-Max |
|
3 A
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
|
40 V
|
| Surface Mount |
|
YES
|
| Technology |
|
SCHOTTKY
|
| Terminal Form |
|
WRAP AROUND
|
| Terminal Position |
|
END
|
|
|
|
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