JAN2N3636
vs
2N3636
feature comparison
| Pbfree Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
GENERAL DIODE CORP
|
| Part Package Code |
TO-39
|
TO-5
|
| Package Description |
TO-39, 3 PIN
|
TO-5, 3 PIN
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
205AB
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Base Capacitance-Max |
10 pF
|
|
| Collector-Emitter Voltage-Max |
175 V
|
175 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
50
|
| JEDEC-95 Code |
TO-39
|
TO-5
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Power Dissipation-Max (Abs) |
5 W
|
1 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
650 ns
|
|
| Turn-on Time-Max (ton) |
200 ns
|
|
| VCEsat-Max |
0.6 V
|
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
| Transition Frequency-Nom (fT) |
|
150 MHz
|
|
|
|
Compare JAN2N3636 with alternatives
Compare 2N3636 with alternatives