JAN2N5547 vs FDS6912AL86Z feature comparison

JAN2N5547 Solitron Devices Inc

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FDS6912AL86Z Fairchild Semiconductor Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SOLITRON DEVICES INC FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
FET Technology JUNCTION METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-71
JESD-30 Code O-MBCY-W6 R-PDSO-G8
Number of Elements 2 2
Number of Terminals 6 8
Operating Mode DEPLETION MODE ENHANCEMENT MODE
Operating Temperature-Max 200 °C 150 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Qualified Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO YES
Terminal Form WIRE GULL WING
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Additional Feature LOGIC LEVEL COMPATIBLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.028 Ω
Transistor Application SWITCHING

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