JAN2N6301 vs BD677 feature comparison

JAN2N6301 Silicon Transistor Corporation

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BD677 STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer SILICON TRANSISTOR CORP STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR ISOLATED
Collector Current-Max (IC) 8 A 4 A
Collector-Emitter Voltage-Max 80 V 60 V
Configuration DARLINGTON DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 750 750
JEDEC-95 Code TO-213 TO-126
JESD-30 Code O-MBFM-P2 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 200 °C 150 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 75 W 40 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal Form PIN/PEG THROUGH-HOLE
Terminal Position BOTTOM SINGLE
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 4 MHz 10 MHz
Base Number Matches 1 2
Part Package Code SIP
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
HTS Code 8541.29.00.95
Factory Lead Time 29 Weeks, 4 Days
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 40 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
VCEsat-Max 2.5 V

Compare JAN2N6301 with alternatives

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