JAN2N6341 vs 2N6341 feature comparison

JAN2N6341 Silicon Transistor Corporation

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2N6341 Inchange Semiconductor Company Ltd

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Rohs Code No
Part Life Cycle Code Transferred Contact Manufacturer
Ihs Manufacturer SILICON TRANSISTOR CORP INCHANGE SEMICONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 10 A 25 A
Collector-Emitter Voltage-Max 150 V 150 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 12
JEDEC-95 Code TO-204 TO-3
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 200 W 200 W
Qualification Status Not Qualified
Reference Standard MIL
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 40 MHz 40 MHz
Base Number Matches 9 24
Collector-Base Capacitance-Max 300 pF
Fall Time-Max (tf) 250 ns
Rise Time-Max (tr) 300 ns
Transistor Application SWITCHING
Turn-off Time-Max (toff) 1250 ns
VCEsat-Max 1.8 V

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