JAN2N6987
vs
JANTX2N6987
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
NEW ENGLAND SEMICONDUCTOR
|
VPT COMPONENTS
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
Collector-Emitter Voltage-Max |
60 V
|
60 V
|
DC Current Gain-Min (hFE) |
50
|
50
|
JEDEC-95 Code |
TO-116
|
TO-116
|
JESD-30 Code |
R-XDIP-T14
|
R-XDIP-T14
|
JESD-609 Code |
e0
|
|
Number of Terminals |
14
|
14
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
PNP
|
PNP
|
Qualification Status |
Not Qualified
|
Qualified
|
Reference Standard |
MIL-PRF-19500/558
|
MIL-19500
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
9
|
11
|
Package Description |
|
DIP-14
|
HTS Code |
|
8541.29.00.95
|
Collector-Base Capacitance-Max |
|
8 pF
|
Configuration |
|
SEPARATE, 4 ELEMENTS
|
Number of Elements |
|
4
|
Operating Temperature-Max |
|
200 °C
|
Operating Temperature-Min |
|
-65 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Power Dissipation Ambient-Max |
|
1.5 W
|
Power Dissipation-Max (Abs) |
|
1.5 W
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
VCEsat-Max |
|
1.6 V
|
|
|
|