JAN2N918
vs
JANTX2N918
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MOTOROLA INC
|
| Package Description |
,
|
CYLINDRICAL, O-MBCY-W4
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
0.05 A
|
0.05 A
|
| Configuration |
Single
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
20
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.2 W
|
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
8
|
8
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.21.00.75
|
| Collector-Base Capacitance-Max |
|
3 pF
|
| Collector-Emitter Voltage-Max |
|
15 V
|
| Highest Frequency Band |
|
VERY HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
|
TO-206AF
|
| JESD-30 Code |
|
O-MBCY-W4
|
| JESD-609 Code |
|
e0
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
4
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
0.3 W
|
| Power Gain-Min (Gp) |
|
15 dB
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MILITARY STANDARD (USA)
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
600 MHz
|
| VCEsat-Max |
|
0.4 V
|
|
|
|
Compare JANTX2N918 with alternatives