JANHCE1N5806
vs
1N5806E3
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
VPT COMPONENTS
|
MICROSEMI CORP
|
Package Description |
DIE-1
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS, A PACKAGE-2
|
Reach Compliance Code |
compliant
|
compliant
|
Application |
FAST RECOVERY
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
S-XUUC-N1
|
O-LALF-W2
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
1
|
2
|
Output Current-Max |
2.5 A
|
1 A
|
Package Body Material |
UNSPECIFIED
|
GLASS
|
Package Shape |
SQUARE
|
ROUND
|
Package Style |
UNCASED CHIP
|
LONG FORM
|
Qualification Status |
Qualified
|
|
Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
Surface Mount |
YES
|
NO
|
Terminal Form |
NO LEAD
|
WIRE
|
Terminal Position |
UPPER
|
AXIAL
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
MELF
|
Pin Count |
|
2
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.80
|
Samacsys Manufacturer |
|
Microsemi Corporation
|
Additional Feature |
|
HIGH RELIABILITY
|
Case Connection |
|
ISOLATED
|
Forward Voltage-Max (VF) |
|
0.875 V
|
JESD-609 Code |
|
e3
|
Non-rep Pk Forward Current-Max |
|
35 A
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-65 °C
|
Rep Pk Reverse Voltage-Max |
|
150 V
|
Technology |
|
AVALANCHE
|
Terminal Finish |
|
MATTE TIN OVER NICKEL
|
|
|
|
Compare JANHCE1N5806 with alternatives
Compare 1N5806E3 with alternatives