JANS2N5666S
vs
2N5666S
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NEW ENGLAND SEMICONDUCTOR
|
VPT COMPONENTS
|
| Package Description |
TO-39, 3 PIN
|
TO-5, 3 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
5 A
|
5 A
|
| Collector-Emitter Voltage-Max |
200 V
|
200 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
15
|
15
|
| JEDEC-95 Code |
TO-205AD
|
TO-39
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500/455
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
7
|
5
|
| HTS Code |
|
8541.29.00.95
|
| Date Of Intro |
|
2020-02-13
|
| Case Connection |
|
COLLECTOR
|
| Collector-Base Capacitance-Max |
|
120 pF
|
| Operating Temperature-Max |
|
200 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation Ambient-Max |
|
1.2 W
|
| Power Dissipation-Max (Abs) |
|
15 W
|
| Turn-off Time-Max (toff) |
|
1500 ns
|
| Turn-on Time-Max (ton) |
|
250 ns
|
| VCEsat-Max |
|
1 V
|
|
|
|