JANSR2N7422U
vs
IRHN93150PBF
feature comparison
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Life Cycle Code |
|
Transferred
|
| Ihs Manufacturer |
|
INTERNATIONAL RECTIFIER CORP
|
| Package Description |
|
CHIP CARRIER, R-CBCC-N3
|
| Pin Count |
|
3
|
| Reach Compliance Code |
|
compliant
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.95
|
| Additional Feature |
|
RADIATION HARDENED; AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
|
500 mJ
|
| Case Connection |
|
DRAIN
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
100 V
|
| Drain Current-Max (ID) |
|
22 A
|
| Drain-source On Resistance-Max |
|
0.085 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
|
R-CBCC-N3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity/Channel Type |
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
|
150 W
|
| Pulsed Drain Current-Max (IDM) |
|
88 A
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
NO LEAD
|
| Terminal Position |
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
290 ns
|
| Turn-on Time-Max (ton) |
|
190 ns
|
| Base Number Matches |
|
1
|
|
|
|
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