JANTX2N6768 vs IRF350 feature comparison

JANTX2N6768 Motorola Mobility LLC

Buy Now Datasheet

IRF350 Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MOTOROLA INC INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, O-MBFM-P2 TO-3, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 14 A 14 A
Drain-source On Resistance-Max 0.3 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-204AA TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Pulsed Drain Current-Max (IDM) 25 A 56 A
Qualification Status Not Qualified Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO NO
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 225 ns
Turn-on Time-Max (ton) 100 ns
Base Number Matches 1 13
Rohs Code No
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 11.3 mJ
JESD-609 Code e0
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 150 W
Terminal Finish Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare JANTX2N6768 with alternatives

Compare IRF350 with alternatives