JANTXV1N5518D-1 vs 1N5518D feature comparison

JANTXV1N5518D-1 Microchip Technology Inc

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1N5518D Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS, DO-35, 2 PIN HERMETIC SEALED, GLASS, DO-35, 2 PIN
Reach Compliance Code compliant not_compliant
Factory Lead Time 20 Weeks
Additional Feature METALLURGICALLY BONDED LOW LEAKAGE CURRENT, LOW VOLTAGE AVALANCHE, LOW ZENER IMPEDANCE, LOW ZENER NOISE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-204AH DO-204AH
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.48 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500
Reference Voltage-Nom 3.3 V 3.3 V
Surface Mount NO NO
Technology ZENER AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 1% 1%
Working Test Current 20 mA 20 mA
Base Number Matches 1 43
Dynamic Impedance-Max 26 Ω
Moisture Sensitivity Level 1
Reverse Current-Max 5 µA

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