JANTXV1N5622 vs 1N5622 feature comparison

JANTXV1N5622 Micross Components

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1N5622 EIC Semiconductor Inc

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Part Life Cycle Code Active Active
Ihs Manufacturer MICROSS COMPONENTS EIC SEMICONDUCTOR CO LTD
Package Description HERMETIC SEALED PACKAGE-2
Reach Compliance Code unknown compliant
Additional Feature METALLURGICALLY BONDED HIGH RELIABILITY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V
JESD-30 Code E-XALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ELLIPTICAL ROUND
Package Style LONG FORM LONG FORM
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Recovery Time-Max 2 µs 2 µs
Surface Mount YES NO
Terminal Form WIRE WIRE
Terminal Position END AXIAL
Base Number Matches 7 13
Pbfree Code Yes
Rohs Code Yes
parentfamilyid 1562941
ECCN Code EAR99
HTS Code 8541.10.00.80
JEDEC-95 Code DO-41
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare JANTXV1N5622 with alternatives

Compare 1N5622 with alternatives