JANTXV1N5809
vs
JAN1N5809
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
BKC SEMICONDUCTORS INC
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Application |
FAST RECOVERY
|
ULTRA FAST RECOVERY POWER
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.875 V
|
0.875 V
|
| JESD-30 Code |
O-LALF-W2
|
O-XALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Output Current-Max |
6 A
|
6 A
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
0.03 µs
|
0.03 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD OVER NICKEL
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
10
|
11
|
| Factory Lead Time |
|
24 Weeks
|
| Additional Feature |
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation-Max |
|
5 W
|
| Reference Standard |
|
MIL-19500
|
|
|
|
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