JANTXV1N5822US
vs
JANTX1N5822US
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
SEMTECH CORP
|
MICROCHIP TECHNOLOGY INC
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.80
|
|
Samacsys Manufacturer |
SEMTECH
|
Microchip
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Non-rep Pk Forward Current-Max |
80 A
|
80 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Output Current-Max |
3 A
|
3 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Qualified
|
Qualified
|
Reference Standard |
MIL-19500
|
MIL-19500/620E
|
Rep Pk Reverse Voltage-Max |
40 V
|
40 V
|
Surface Mount |
YES
|
YES
|
Technology |
SCHOTTKY
|
SCHOTTKY
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
2
|
2
|
Rohs Code |
|
No
|
Package Description |
|
HERMETIC SEALED, D-5B, 2 PIN
|
Factory Lead Time |
|
24 Weeks
|
Additional Feature |
|
METALLURGICALLY BONDED
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
125 °C
|
Operating Temperature-Min |
|
-65 °C
|
Terminal Finish |
|
TIN LEAD
|
|
|
|