JANTXV1N5822US
vs
JANS1N5822US
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
COMPENSATED DEVICES INC
|
COMPENSATED DEVICES INC
|
Reach Compliance Code |
unknown
|
unknown
|
Additional Feature |
METALLURGICALLY BONDED
|
METALLURGICALLY BONDED
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.7 V
|
0.7 V
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Output Current-Max |
3 A
|
3 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/620
|
MIL-19500/620
|
Rep Pk Reverse Voltage-Max |
40 V
|
|
Reverse Current-Max |
100 µA
|
100 µA
|
Surface Mount |
YES
|
YES
|
Technology |
SCHOTTKY
|
SCHOTTKY
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
6
|
6
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.80
|
|
|
|