JANTXV2N3749
vs
2N3749
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
UNITRODE CORP
|
ASI SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Collector Current-Max (IC) |
5 A
|
5 A
|
| Collector-Base Capacitance-Max |
150 pF
|
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
15
|
40
|
| JEDEC-95 Code |
TO-111
|
|
| JESD-30 Code |
O-MUPM-D4
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
POST/STUD MOUNT
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
30 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
SOLDER LUG
|
|
| Terminal Position |
UPPER
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
20 MHz
|
40 MHz
|
| Turn-off Time-Max (toff) |
2000 ns
|
|
| Turn-on Time-Max (ton) |
360 ns
|
|
| VCEsat-Max |
1.5 V
|
|
| Base Number Matches |
1
|
1
|
| Power Dissipation-Max (Abs) |
|
30 W
|
|
|
|
Compare JANTXV2N3749 with alternatives
Compare 2N3749 with alternatives