JANTXV2N5686 vs 2N5686E3 feature comparison

JANTXV2N5686 Silicon Transistor Corporation

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2N5686E3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SILICON TRANSISTOR CORP MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 25 A 50 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 15 5
JEDEC-95 Code TO-204 TO-204AE
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 300 W
Qualification Status Not Qualified
Reference Standard MIL
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 2 MHz
Base Number Matches 1 1
Package Description TO-3, 2 PIN

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