JANTXV2N6649
vs
JAN2N6649
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
NEW ENGLAND SEMICONDUCTOR
|
| Package Description |
TO-3, 2 PIN
|
TO-3, 2 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
10 A
|
10 A
|
| Collector-Emitter Voltage-Max |
60 V
|
60 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
100
|
100
|
| JEDEC-95 Code |
TO-3
|
TO-3
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/527B
|
MIL-19500/527B
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
9
|
7
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
27 W
|
| Terminal Finish |
|
TIN LEAD
|
| Transition Frequency-Nom (fT) |
|
20 MHz
|
|
|
|
Compare JANTXV2N6649 with alternatives
Compare JAN2N6649 with alternatives