JANTXV2N6650
vs
JANTXV2N6649
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NEW ENGLAND SEMICONDUCTOR
|
VPT COMPONENTS
|
| Package Description |
TO-3, 2 PIN
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
10 A
|
10 A
|
| Collector-Emitter Voltage-Max |
80 V
|
60 V
|
| Configuration |
DARLINGTON
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
100
|
100
|
| JEDEC-95 Code |
TO-204AA
|
TO-204AA
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
100 W
|
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Reference Standard |
MIL-19500/527
|
MIL-19500
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
20 MHz
|
|
| Base Number Matches |
9
|
9
|
| Date Of Intro |
|
2019-10-03
|
| Case Connection |
|
COLLECTOR
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|