JANTXV2N6661
vs
JANTX2N6661
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VPT COMPONENTS
|
VPT COMPONENTS
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
TO-39, 3 PIN
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
8541.21.00.95
|
Date Of Intro |
2020-08-03
|
2020-08-03
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
90 V
|
90 V
|
Drain Current-Max (ID) |
0.86 A
|
0.86 A
|
Drain-source On Resistance-Max |
4 Ω
|
4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
10 pF
|
10 pF
|
JEDEC-95 Code |
TO-205AD
|
TO-205AD
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.725 W
|
0.725 W
|
Power Dissipation-Max (Abs) |
6.25 W
|
6.25 W
|
Qualification Status |
Qualified
|
Qualified
|
Reference Standard |
MIL-19500
|
MIL-19500
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Rohs Code |
|
No
|
|
|
|
Compare JANTXV2N6661 with alternatives
Compare JANTX2N6661 with alternatives