JANTXV2N6661UB
vs
JANTX2N6661UB
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VPT COMPONENTS
|
VPT COMPONENTS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
8541.21.00.95
|
| Date Of Intro |
2020-08-03
|
2020-08-03
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
90 V
|
90 V
|
| Drain Current-Max (ID) |
0.86 A
|
0.86 A
|
| Drain-source On Resistance-Max |
4 Ω
|
4 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
10 pF
|
10 pF
|
| JESD-30 Code |
R-XDSO-N3
|
R-XDSO-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
0.57 W
|
0.57 W
|
| Power Dissipation-Max (Abs) |
2.5 W
|
2.5 W
|
| Qualification Status |
Qualified
|
Qualified
|
| Reference Standard |
MIL-19500
|
MIL-19500
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
SMALL OUTLINE, R-XDSO-N3
|
|
|
|
Compare JANTXV2N6661UB with alternatives
Compare JANTX2N6661UB with alternatives