JANTXV2N6790
vs
2N6790
feature comparison
Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
Ihs Manufacturer |
SEMICOA CORP
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
HERMETIC SEALED, TO-39, 3 PIN
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
0.242 mJ
|
66 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
3.5 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.85 Ω
|
0.8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
14 A
|
14 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500
|
MILITARY STANDARD (USA)
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
AMPLIFIER
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
15
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
AVALANCHE RATED
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation Ambient-Max |
|
20 W
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
Turn-off Time-Max (toff) |
|
100 ns
|
Turn-on Time-Max (ton) |
|
90 ns
|
|
|
|
Compare JANTXV2N6790 with alternatives
Compare 2N6790 with alternatives