K3P6C1000F-GC150
vs
GM23C32000FW-15
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
GOLDSTAR ELECTRON CO LTD
|
| Part Package Code |
SOIC
|
|
| Package Description |
SOP,
|
|
| Pin Count |
44
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.71
|
|
| Access Time-Max |
150 ns
|
200 ns
|
| Alternate Memory Width |
8
|
16
|
| JESD-30 Code |
R-PDSO-G44
|
R-PDSO-G44
|
| Length |
28.5 mm
|
|
| Memory Density |
33554432 bit
|
524288 bit
|
| Memory IC Type |
MASK ROM
|
MASK ROM
|
| Memory Width |
16
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
44
|
44
|
| Number of Words |
2097152 words
|
4194304 words
|
| Number of Words Code |
2000000
|
4000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
2MX16
|
64KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
SOP
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
225
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
3.1 mm
|
|
| Supply Current-Max |
0.15 mA
|
0.06 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
1.27 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Width |
12.6 mm
|
|
| Base Number Matches |
1
|
1
|
| Output Characteristics |
|
3-STATE
|
|
|
|
Compare K3P6C1000F-GC150 with alternatives
Compare GM23C32000FW-15 with alternatives